参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current23 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Rds On - Drain-Source Resistance235 mOhms
MXHTS85412999
CNHTS8541290000
KRHTS8541299000
Qg - Gate Charge150 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
TARIC8541290000
PackagingTube
BrandVishay Semiconductors
RoHS Details
Product CategoryMOSFET
ImageVishay Semiconductors IRFP23N50LPBF
SeriesIRFP
Unit Weight1.340411 oz
SubcategoryMOSFETs
Factory Pack Quantity500
ManufacturerVishay
Product TypeMOSFET
Pd - Power Dissipation370 W
USHTS8541290095
DescriptionMOSFET 500V N-CH HEXFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)