参数项参数值
参数项参数值
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce5000 @ 50mA, 2V
Frequency - Transition200MHz
Supplier Device Package3-NP
Current - Collector (Ic) (Max)700 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max600 mW
Moisture Sensitivity Level1 (Unlimited)