参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Width4.7 mm
Rds On - Drain-Source Resistance4.2 Ohms
Transistor Type1 N-Channel
Length10.67 mm
Height16.3 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge22 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
BrandON Semiconductor / Fairchild
CNHTS8541290000
ManufacturerON Semiconductor
Product CategoryMOSFET
Factory Pack Quantity1000
SeriesFQPF4N90C
TARIC8541290000
Product TypeMOSFET
Channel ModeEnhancement
RoHS Details
ImageON Semiconductor / Fairchild FQPF4N90CT
DescriptionMOSFET 900V, 4A, NCH MOSFET
SubcategoryMOSFETs
Unit Weight0.080072 oz
USHTS8541290095
Pd - Power Dissipation47 W
Vds - Drain-Source Breakdown Voltage900 V
Number of Channels1 Channel
Moisture Sensitivity LevelNot Applicable