在线商城 
FQPF4N90C
厂牌：onsemi
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046910861
描述：MOSFET N-CH 900V 4A TO-220F
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min5 s
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance4.2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Height16.07 mm
Length10.36 mm
MXHTS85412999
Qg - Gate Charge22 nC
KRHTS8541299000
Package / CaseTO-220-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Channel ModeEnhancement
Fall Time35 ns
PackagingTube
TARIC8541290000
RoHS Details
Unit Weight0.080072 oz
BrandON Semiconductor / Fairchild
SeriesFQPF4N90C
ImageON Semiconductor / Fairchild FQPF4N90C
Pd - Power Dissipation47 W
ManufacturerON Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
Part # AliasesFQPF4N90C_NL
Factory Pack Quantity1000
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage900 V
DescriptionMOSFET 900V N-Ch Q-FET advance C-Series
TradenameQFET
Number of Channels1 Channel
Rise Time50 ns
TypeMOSFET
Moisture Sensitivity LevelNot Applicable