参数项参数值
参数项参数值
DC Current Gain hFE Max82 at 500 mA, 3 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 32 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max32 V
Continuous Collector Current- 2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min82
Width2.5 mm
Height1.5 mm
Length4.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
RoHS Details
Unit Weight0.004603 oz
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2000 mW
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT DVR PNP 32V 2A
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)