参数项参数值
参数项参数值
Forward Transconductance - Min470 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Id - Continuous Drain Current660 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.2 ns
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time49 ns
Width3.5 mm
Height1.6 mm
Length6.5 mm
MXHTS85412999
Qg - Gate Charge12.9 nC
KRHTS8541299000
Package / CasePG-SOT-223-4
Mounting StyleSMD/SMT
JPHTS8541290100
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Fall Time19 ns
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.003951 oz
RoHS Details
Pd - Power Dissipation1.8 W
SeriesBSP297
Part # AliasesBSP297 H6327 SP001058622
ImageInfineon Technologies BSP297H6327XTSA1
BrandInfineon Technologies
Factory Pack Quantity1000
Product TypeMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage200 V
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time3.8 ns
USHTS8541290095
DescriptionMOSFET N-Ch 200V 660mA SOT-223-3
Moisture Sensitivity Level1 (Unlimited)