参数项参数值
参数项参数值
Forward Transconductance - Min3.23 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current1.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4.6 ns
Width3.5 mm
Height1.6 mm
Rds On - Drain-Source Resistance177 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21.9 ns
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge6.2 nC
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
ImageInfineon Technologies BSP373N H6327
Channel ModeEnhancement
BrandInfineon Technologies
Fall Time13.5 ns
Product TypeMOSFET
ManufacturerInfineon
SeriesBSP373
USHTS8541290095
Unit Weight0.003951 oz
Factory Pack Quantity1000
Product CategoryMOSFET
DescriptionMOSFET N-Ch 100V 1.8A SOT-223-3
Part # AliasesSP001059328 BSP373NH6327XTSA1
Pd - Power Dissipation1.8 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time5.9 ns