参数项参数值
参数项参数值
DC Current Gain hFE Max160
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationSingle
Transistor PolarityNPN
DC Collector/Base Gain hfe Min160
Width1.24 mm
Height0.85 mm
Length2.1 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSC-70-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000219 oz
TARIC8541210000
ImageON Semiconductor MUN5215T1G
Pd - Power Dissipation202 mW
RoHS Details
SeriesMUN5215
Factory Pack Quantity3000
Typical Input Resistor10 kOhms
BrandON Semiconductor
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Product CategoryBipolar Transistors - Pre-Biased
SubcategoryTransistors
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT NPN
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)