SIS862DN-T1-GE3

SIS862DN-T1-GE3

厂牌：VISHAY

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046921059

描述： Trans MOSFET N-CH 60V 40A 8-Pin PowerPAK 1212 T/R

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min60 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current40 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Height1.04 mm

Length3.3 mm

JPHTS8541290100

Typical Turn-On Delay Time12 ns

Minimum Operating Temperature- 55 C

CAHTS8541290000

Rds On - Drain-Source Resistance7 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time20 ns

RoHS Details

Package / CasePowerPAK-1212-8

Factory Pack Quantity3000

ImageVishay Semiconductors SIS862DN-T1-GE3

PackagingMouseReel

PackagingReel

PackagingCut Tape

BrandVishay Semiconductors

Width3.3 mm

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

TARIC8541290000

ManufacturerVishay

SubcategoryMOSFETs

DescriptionMOSFET 60V Vds 20V Vgs PowerPAK 1212-8

Product CategoryMOSFET

Qg - Gate Charge32 nC

MXHTS85412999

SeriesSIS

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.007408 oz

Fall Time5 ns

CNHTS8541290000

Pd - Power Dissipation52 W

TradenameTrenchFET, PowerPAK

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time5 ns

Moisture Sensitivity Level1 (Unlimited)