参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current6 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage1.5 V
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min30
Width4.82 mm
Height9.28 mm
Length10.28 mm
JPHTS8541290100
Maximum Operating Temperature+ 150 C
MXHTS85412999
SeriesBD243C
KRHTS8541299000
BrandON Semiconductor
Mounting StyleThrough Hole
Package / CaseTO-220-3
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
PackagingTube
Unit Weight0.211644 oz
RoHS Details
TARIC8541290000
Pd - Power Dissipation65 W
USHTS8541290095
DescriptionBipolar Transistors - BJT 6A 100V 65W NPN
ImageON Semiconductor BD243CG
Factory Pack Quantity50
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerON Semiconductor