参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage650 mV
DC Collector/Base Gain hfe Min125
Width1.4 mm
Height1 mm
Length3.05 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000282 oz
RoHS Details
SeriesBC857A
Pd - Power Dissipation300 mW
BrandDiodes Incorporated
ImageDiodes Incorporated BC857A-7-F
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT PNP BIPOLAR
Moisture Sensitivity Level1 (Unlimited)