参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 45 V
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min220 at -2 mA, - 5 V
Width1.2 mm
Height0.6 mm
Length1.6 mm
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.001023 oz
RoHS Details
Pd - Power Dissipation200 mW
SeriesBC857B
ImageDiodes Incorporated BC857BV-7
BrandDiodes Incorporated
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
DescriptionBipolar Transistors - BJT PNP BIPOLAR
Moisture Sensitivity Level1 (Unlimited)