参数项参数值
参数项参数值
DC Current Gain hFE Max220 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min220 at 2 mA, 5 V
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.000176 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation200 mW
ImageNexperia BC857BW,135
Part # Aliases934021850135
BrandNexperia
Factory Pack Quantity10000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerNexperia
USHTS8541210075
DescriptionBipolar Transistors - BJT TRANS GP TAPE-11
Moisture Sensitivity Level1 (Unlimited)