参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 700 mV
DC Collector/Base Gain hfe Min60 at - 300 mA, - 1 V
Width1.4 mm
Height1 mm
Length3.05 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation310 mW
SeriesBC807
ImageDiodes Incorporated BC807-16-7-F
BrandDiodes Incorporated
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8541210095
DescriptionBipolar Transistors - BJT PNP BIPOLAR