参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.2 V
DC Collector/Base Gain hfe Min25
Width6.22 mm
Height2.38 mm
Length6.73 mm
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Unit Weight0.000388 oz
SeriesMJD31C
BrandON Semiconductor
ImageON Semiconductor MJD31CRLG
ManufacturerON Semiconductor
Pd - Power Dissipation1.56 W
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity1800
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 3A 100V 15W NPN
Moisture Sensitivity Level1 (Unlimited)