参数项参数值
参数项参数值
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max100 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Length6.6 mm
Width6.2 mm
Height2.4 mm
Minimum Operating Temperature- 65 C
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity2500
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageSTMicroelectronics MJD31CT4-A
Product TypeBJTs - Bipolar Transistors
BrandSTMicroelectronics
DescriptionBipolar Transistors - BJT LO VLT NPN PWR TRANS
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesMJD31CT4-A
ManufacturerSTMicroelectronics
SubcategoryTransistors
Unit Weight0.063493 oz
Pd - Power Dissipation15000 mW
Moisture Sensitivity Level1 (Unlimited)