参数项参数值
参数项参数值
DC Current Gain hFE Max50
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage1.2 V
DC Collector/Base Gain hfe Min10
Minimum Operating Temperature- 55 C
Package / CaseDPAK-3
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Factory Pack Quantity2500
ImageNexperia MJD31CJ
PackagingReel
PackagingCut Tape
Product TypeBJTs - Bipolar Transistors
BrandNexperia
DescriptionBipolar Transistors - BJT TRANS BIPOLAR
TARIC8541210000
RoHS Details
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia
Unit Weight0.011159 oz
USHTS8541290095
Part # Aliases934660544118
Pd - Power Dissipation15 W
Moisture Sensitivity Level1 (Unlimited)