参数项参数值
参数项参数值
DC Current Gain hFE Max50
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage1.2 V
DC Collector/Base Gain hfe Min10
Minimum Operating Temperature- 55 C
Package / CaseTO-252-3
CNHTS8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Factory Pack Quantity2500
ImageDiodes Incorporated MJD31CQ-13
PackagingMouseReel
PackagingReel
PackagingCut Tape
Product TypeBJTs - Bipolar Transistors
BrandDiodes Incorporated
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor
TARIC8541210000
RoHS Details
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerDiodes Incorporated
Unit Weight1.874 lbs
USHTS8541290095
Pd - Power Dissipation15 W
Moisture Sensitivity Level1 (Unlimited)