MJD31C1G

MJD31C1G

厂牌：onsemi

包装：TUBE 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000046930371

描述：TRANS POWER NPN 3A 100V DPAK-3

商品参数

参数项参数值

参数项参数值

Gain Bandwidth Product fT3 MHz

Collector- Base Voltage VCBO100 V

Maximum DC Collector Current3 A

Collector- Emitter Voltage VCEO Max100 V

Continuous Collector Current3 A

ConfigurationSingle

TechnologySi

Transistor PolarityNPN

Emitter- Base Voltage VEBO5 V

MXHTS85412999

Length6.73 mm

Width6.22 mm

Height2.38 mm

KRHTS8541299000

Collector-Emitter Saturation Voltage1.2 V

DC Collector/Base Gain hfe Min25

Minimum Operating Temperature- 65 C

JPHTS8541290100

CAHTS8541290000

CNHTS8541290000

Package / CaseIPAK-3

Mounting StyleThrough Hole

Maximum Operating Temperature+ 150 C

PackagingTube

Factory Pack Quantity75

ImageON Semiconductor MJD31C1G

BrandON Semiconductor

Product CategoryBipolar Transistors - BJT

TARIC8541290000

SeriesMJD31C

RoHS Details

DescriptionBipolar Transistors - BJT 3A 100V 15W NPN

Product TypeBJTs - Bipolar Transistors

ManufacturerON Semiconductor

SubcategoryTransistors

Unit Weight0.139332 oz

USHTS8541290095

Pd - Power Dissipation1.56 W