参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage800 mV, 1 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current800 mA, 550 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.5 ns, 3.3 ns
Rds On - Drain-Source Resistance700 mOhms, 1.7 Ohms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time16.8 ns, 406 ns
Minimum Operating Temperature- 55 C
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge1.2 nC, 800 pC
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
BrandDiodes Incorporated
Factory Pack Quantity10000
ImageDiodes Incorporated DMC3401LDW-13
TARIC8541290000
ManufacturerDiodes Incorporated
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V-30V
Product CategoryMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time13.8 ns, 237 ns
USHTS8541210095
Pd - Power Dissipation400 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time3.3 ns, 2.3 ns