参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current9.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance15 mOhms
Transistor Type1 N-Channel
Width3.9 mm
Height1.75 mm
Qg - Gate Charge31 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageInfineon / IR IRF7493TRPBF
RoHS Details
Unit Weight0.019048 oz
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation2.5 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 80V 9.2A 15mOhm 31nC Qg
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)