参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 2.5 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 2.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min120
MXHTS85411001
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CNHTS8541100000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
ImageROHM Semiconductor 2SAR544PFRAT100
RoHS Details
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2 W
BrandROHM Semiconductor
Part # Aliases2SAR544PFRA
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT PNP SOT-89 -2.5A 120 to 390hFE -80V
ManufacturerROHM Semiconductor
USHTS8541100050