参数项参数值
参数项参数值
Forward Transconductance - Min36 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current90 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance6.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
MXHTS85412999
Qg - Gate Charge55 nC
KRHTS8541299000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time8 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.003527 oz
RoHS Details
SeriesOptiMOS 3
BrandInfineon Technologies
Part # AliasesSP000778082 BSC7N1NS3GXT BSC070N10NS3GATMA1
ImageInfineon Technologies BSC070N10NS3 G
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity5000
Vds - Drain-Source Breakdown Voltage100 V
ManufacturerInfineon
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
Rise Time10 ns
TradenameOptiMOS
DescriptionMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3