参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current6.8 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541210101
Height1.75 mm
CAHTS8541210000
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
ImageVishay Semiconductors SI4100DY-T1-E3
Rds On - Drain-Source Resistance63 mOhms
Maximum Operating Temperature+ 150 C
Package / CaseSO-8
DescriptionMOSFET 100V Vds 20V Vgs SO-8
PackagingMouseReel
PackagingReel
PackagingCut Tape
Width3.9 mm
Mounting StyleSMD/SMT
TARIC8541290000
BrandVishay Semiconductors
Qg - Gate Charge20 nC
Factory Pack Quantity2500
Product TypeMOSFET
MXHTS85412101
ManufacturerVishay
RoHS Details
SubcategoryMOSFETs
SeriesSI4
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.006596 oz
CNHTS8541210000
Part # AliasesSI4100DY-E3
Pd - Power Dissipation6 W
TradenameTrenchFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)