参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current22 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance18 mOhms
Transistor Type1 N-Channel
MXHTS85412999
CNHTS8541290000
Qg - Gate Charge30 nC
Package / CaseDPAK-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time65 ns
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
SeriesRD3L
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RD3L220SNTL1
Product CategoryMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation20 W
Part # AliasesRD3L220SN
USHTS8541290095
DescriptionMOSFET Nch 60V 22A TO-252(DPAK)
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time45 ns
Moisture Sensitivity Level1 (Unlimited)