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R6009JNXC7G
厂牌：ROHM
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046967725
描述：N-Channel 600V 9A (Tc) 53W (Tc) Through Hole TO-220FM
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance585 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time38 ns
Qg - Gate Charge22 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time20 ns
PackagingTube
TARIC8541290000
SeriesBM14270MUV-LB
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6009JNXC7G
Product CategoryMOSFET
Factory Pack Quantity50
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation53 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 9A POWER
Vds - Drain-Source Breakdown Voltage600 V
TradenamePrestoMOS
Number of Channels1 Channel
Rise Time16 ns
Moisture Sensitivity Level1 (Unlimited)