参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Collector- Emitter Voltage VCEO Max1200 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage1.75 V
Package / CaseTO247-3-46
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 40 C
PackagingTube
RoHS Details
ImageInfineon Technologies IKQ40N120CT2XKSA1
Factory Pack Quantity240
BrandInfineon Technologies
Product TypeIGBT Transistors
Unit Weight0.211644 oz
ManufacturerInfineon
Continuous Collector Current at 25 C80 A
SubcategoryIGBTs
Product CategoryIGBT Transistors
DescriptionIGBT Transistors IGBT PRODUCTS
Pd - Power Dissipation500 W
Continuous Collector Current Ic Max80 A
Part # AliasesIKQ40N120CT2 SP001272732
Moisture Sensitivity Level1 (Unlimited)