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IRF840SPBF
厂牌：VISHAY
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000047001934
描述：MOSFET N-CH 500V 8A D2PAK
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min4.9 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance850 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time49 ns
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge63 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time20 ns
TARIC8541290000
PackagingTube
BrandVishay Semiconductors
SeriesIRF
RoHS Details
ImageVishay Semiconductors IRF840SPBF
Product CategoryMOSFET
Unit Weight0.050717 oz
SubcategoryMOSFETs
Factory Pack Quantity1000
ManufacturerVishay
Product TypeMOSFET
Pd - Power Dissipation3.1 W
USHTS8541290095
DescriptionMOSFET 500V N-CH HEXFET D2-PA
Vds - Drain-Source Breakdown Voltage500 V
Number of Channels1 Channel
Rise Time23 ns
Moisture Sensitivity Level1 (Unlimited)