参数项参数值
参数项参数值
DC Current Gain hFE Max140
Gain Bandwidth Product fT5.5 GHz
Collector- Base Voltage VCBO20 V
Collector- Emitter Voltage VCEO Max15 V
Continuous Collector Current120 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO3 V
DC Collector/Base Gain hfe Min70
Width2.5 mm
Height1.5 mm
Length4.5 mm
Package / CaseSOT-89-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.004603 oz
RoHS Details
Pd - Power Dissipation1 W
ImageInfineon Technologies BFQ19SH6327XTSA1
Part # AliasesBFQ 19S H6327 SP001125294
BrandInfineon Technologies
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerInfineon
DescriptionBipolar Transistors - BJT RF BIP TRANSISTORS
Moisture Sensitivity Level1 (Unlimited)