参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance3.6 mOhms
Transistor Type1 N-Channel
MXHTS85423399
KRHTS8541299000
Qg - Gate Charge80 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Factory Pack Quantity2500
CNHTS8541210000
BrandSTMicroelectronics
ManufacturerSTMicroelectronics
TARIC8541290000
RoHS Details
DescriptionMOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep
Product CategoryMOSFET
ImageSTMicroelectronics STD120N4LF6
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.139332 oz
USHTS8541290075
Pd - Power Dissipation110 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)