JANTX2N3439

JANTX2N3439

厂牌：New England Semiconductor (NES) / N E Semi

包装：TRAY 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000047005121

描述：Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-39 Bag

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商品参数

参数项参数值

参数项参数值

PackagingBulk

Package / CaseTO-205AD, TO-39-3 Metal Can

Mounting TypeThrough Hole

Transistor TypeNPN

Operating Temperature-65°C ~ 200°C (TJ)

Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA

Current - Collector Cutoff (Max)2µA

DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA, 10V

Frequency - Transition-

Supplier Device PackageTO-39

GradeMilitary

Current - Collector (Ic) (Max)1 A

Voltage - Collector Emitter Breakdown (Max)350 V

Power - Max800 mW

QualificationMIL-PRF-19500/368

Moisture Sensitivity Level1 (Unlimited)