参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
KRHTS8541299000
Typical Turn-On Delay Time14 ns
ManufacturerSTMicroelectronics
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Rds On - Drain-Source Resistance186 mOhms
Transistor Type1 N-Channel
Package / CasePowerFLAT-8x8-5
Factory Pack Quantity3000
BrandSTMicroelectronics
TARIC8541290000
Maximum Operating Temperature+ 150 C
RoHS Details
Mounting StyleSMD/SMT
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageSTMicroelectronics STL24N60M2
SubcategoryMOSFETs
Qg - Gate Charge29 nC
Product CategoryMOSFET
DescriptionMOSFET N-CH 600V 0.186Ohm typ. 18A MDmesh M2
Product TypeMOSFET
MXHTS85412999
Moisture SensitiveYes
SeriesSTL24N60M2
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.006349 oz
Fall Time15 ns
CNHTS8541290000
Pd - Power Dissipation125 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time9 ns
Moisture Sensitivity Level3 (168 Hours)