参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 150 mA
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
MXHTS85412999
Width1.25 mm
DC Collector/Base Gain hfe Min120
Height0.9 mm
Length2 mm
KRHTS8541299000
Package / CaseSOT-363-6
CNHTS8541290000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageROHM Semiconductor UMT1NTN
RoHS Details
SeriesUMT1N
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Unit Weight0.000265 oz
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT DUAL PNP 50V 150MA SOT-363
SubcategoryTransistors
Pd - Power Dissipation150 mW
Part # AliasesUMT1N
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)