R6030JNZ4C13

R6030JNZ4C13

厂牌：ROHM Semiconductor

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000047079781

描述：Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247G Tube

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage5 V

TechnologySi

Id - Continuous Drain Current30 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time37 ns

Rds On - Drain-Source Resistance143 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time70 ns

Qg - Gate Charge74 nC

Package / CaseTO-247-3

Mounting StyleThrough Hole

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

Fall Time25 ns

PackagingTube

TARIC8541290000

SeriesBM14270MUV-LB

BrandROHM Semiconductor

RoHS Details

ImageROHM Semiconductor R6030JNZ4C13

Product CategoryMOSFET

Unit Weight0.454064 oz

Factory Pack Quantity30

SubcategoryMOSFETs

ManufacturerROHM Semiconductor

Product TypeMOSFET

Pd - Power Dissipation370 W

USHTS8541290095

DescriptionMOSFET 600V N-CH 30A POWER

Vds - Drain-Source Breakdown Voltage600 V

TradenamePrestoMOS

Number of Channels1 Channel

Rise Time26 ns

Moisture Sensitivity Level1 (Unlimited)