参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO45 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width3.7 mm
Height1.65 mm
Length6.7 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
Unit Weight0.003951 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation2000 mW
SeriesBCP54
ImageDiodes Incorporated BCP5416TA
BrandDiodes Incorporated
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541290095
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
Moisture Sensitivity Level1 (Unlimited)