参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage700 mV
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 65 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
ImageON Semiconductor NSVBC817-16LT1G
TARIC8541290000
RoHS Details
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Unit Weight0.001376 oz
DescriptionBipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V
ManufacturerON Semiconductor
USHTS8541290095
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)