DMG6601LVT-7

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000047085505

描述：Trans MOSFET N/P-CH 30V 3.8A/2.5A Automotive 6-Pin TSOT-26 T/R

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商品参数

参数项参数值

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage500 mV, 400 mV

TechnologySi

Transistor PolarityN-Channel, P-Channel

Id - Continuous Drain Current3.8 A, 2.5 A

Vgs - Gate-Source Voltage- 12 V, + 12 V

MXHTS85412101

Typical Turn-On Delay Time1.6 ns, 1.7 ns

KRHTS8541219000

CNHTS8541210000

Rds On - Drain-Source Resistance55 mOhms, 110 mOhms

Transistor Type1 N-Channel, 1 P-Channel

Typical Turn-Off Delay Time31.2 ns, 18.3 ns

Minimum Operating Temperature- 55 C

JPHTS8541210101

CAHTS8541210000

Package / CaseTSOT-26-6

Mounting StyleSMD/SMT

Qg - Gate Charge12.3 nC, 13.8 nC

Maximum Operating Temperature+ 150 C

PackagingMouseReel

PackagingCut Tape

PackagingReel

RoHS Details

BrandDiodes Incorporated

Factory Pack Quantity3000

Product CategoryMOSFET

ImageDiodes Incorporated DMG6601LVT-7

TARIC8541210000

SeriesDMG6601

Product TypeMOSFET

ManufacturerDiodes Incorporated

DescriptionMOSFET 30V Comp ENH Mode 25 to 30V MosFET

SubcategoryMOSFETs

Channel ModeEnhancement

Fall Time15.6 ns, 2.2 ns

Unit Weight0.000459 oz

USHTS8541210095

Pd - Power Dissipation1.3 W

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels2 Channel

Rise Time7.4 ns, 4.6 ns

Moisture Sensitivity Level1 (Unlimited)