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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage0.9 V
TechnologySi
Id - Continuous Drain Current6.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
CNHTS8541210000
Rds On - Drain-Source Resistance25 MOhms
Transistor Type1 N-Channel
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge7.1 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMN2024U-7
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET MOSFET
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541210095
Unit Weight0.002523 oz
Pd - Power Dissipation1.4 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)