参数项参数值
参数项参数值
Forward Transconductance - Min290 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current260 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns
Width3.5 mm
Rds On - Drain-Source Resistance7.5 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time67 ns
Height1.6 mm
Length6.5 mm
MXHTS85412101
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge5.4 nC
Package / CaseSOT-223-4
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541210000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
ImageInfineon Technologies BSP92PH6327XTSA1
Channel ModeEnhancement
BrandInfineon Technologies
Fall Time33 ns
Product TypeMOSFET
SeriesBSP92
ManufacturerInfineon
USHTS8541290095
Unit Weight0.003951 oz
Factory Pack Quantity1000
Product CategoryMOSFET
DescriptionMOSFET P-Ch -250V -260mA SOT-223-4
Part # AliasesBSP92P H6327 SP001058796
Pd - Power Dissipation1.8 W
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time6 ns
Moisture Sensitivity Level1 (Unlimited)