参数项参数值
参数项参数值
DC Current Gain hFE Max220 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min110 at 2mA, 5 V
Package / CaseDFN-1110D-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
RoHS Details
Pd - Power Dissipation340 mW
BrandNexperia
Part # Aliases934660996147
ImageNexperia BC847AQBZ
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity5000
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT BC847AQB/SOT8015/DFN1110D-3
Moisture Sensitivity Level1 (Unlimited)