参数项参数值
参数项参数值
Forward Transconductance - Min11 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current14 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
MXHTS85412101
Rds On - Drain-Source Resistance52 mOhms
Transistor Type1 P-Channel
KRHTS8541299000
Qg - Gate Charge25 nC
Package / CaseWDFN-8
CNHTS8541290000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageON Semiconductor NVTFS5116PLTAG
TARIC8541210000
RoHS Details
Factory Pack Quantity1500
SeriesNVTFS5116PL
Unit Weight0.001043 oz
ManufacturerON Semiconductor
BrandON Semiconductor
Product TypeMOSFET
DescriptionMOSFET Single P-Channel 60V,14A,52mohm
Product CategoryMOSFET
Pd - Power Dissipation21 W
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)