参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max60 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Width3.7 mm
Height1.65 mm
Length6.7 mm
KRHTS8541299000
Package / CaseSOT-223-4
CNHTS8541290000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
ImageDiodes Incorporated BCP5516TA
TARIC8541290000
RoHS Details
Factory Pack Quantity1000
ManufacturerDiodes Incorporated
SeriesBCP55
Unit Weight0.003951 oz
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation2000 mW
SubcategoryTransistors
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)