参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current6 A
KRHTS8541219000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541210101
CAHTS8541210000
Height1.04 mm
Length3.3 mm
Minimum Operating Temperature- 55 C
ImageVishay Semiconductors SI7308DN-T1-E3
Product CategoryMOSFET
Rds On - Drain-Source Resistance58 mOhms
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-1212-8
DescriptionMOSFET 60V Vds 20V Vgs PowerPAK 1212-8
PackagingMouseReel
PackagingReel
PackagingCut Tape
Width3.3 mm
Mounting StyleSMD/SMT
TARIC8541290000
Factory Pack Quantity3000
BrandVishay Semiconductors
Qg - Gate Charge20 nC
MXHTS85412101
Product TypeMOSFET
ManufacturerVishay
RoHS Details
SeriesSI7
SubcategoryMOSFETs
USHTS8541210095
Channel ModeEnhancement
CNHTS8541210000
Part # AliasesSI7308DN-E3
Pd - Power Dissipation19.8 W
TradenameTrenchFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)