参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current- 2.5 A
Collector- Emitter Voltage VCEO Max- 100 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 50 mV
DC Collector/Base Gain hfe Min300 at - 10 mA, - 10 V
MXHTS85411001
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541100901
Minimum Operating Temperature- 55 C
CAHTS8541100090
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541100000
RoHS Details
Unit Weight0.000282 oz
SeriesFMMT723
BrandDiodes Incorporated
ImageDiodes Incorporated FMMT723QTA
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
USHTS8541210075
DescriptionBipolar Transistors - BJT 100V PNP Low Sat 625mW -1A 210mOhm
Moisture Sensitivity Level1 (Unlimited)