参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Width3.5 mm
Transistor PolarityP-Channel
Id - Continuous Drain Current18.2 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height1.6 mm
Typical Turn-On Delay Time6 ns
Length6.5 mm
Rds On - Drain-Source Resistance28 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time110 ns
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
PackagingCut Tape
PackagingReel
PackagingMouseReel
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMP6023LE-13
Factory Pack Quantity2500
SeriesDMP60
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET P-Ch 60V Enh Mode 145W 20Vgs 2569pF
Channel ModeEnhancement
Fall Time62 ns
Unit Weight0.003951 oz
Pd - Power Dissipation17.3 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time7.1 ns
Moisture Sensitivity Level1 (Unlimited)