参数项参数值
参数项参数值
Forward Transconductance - Min5 s
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance63 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time11 ns
Width1.4 mm
Height1.12 mm
Length2.9 mm
Qg - Gate Charge9 nC
Package / CaseSSOT-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
Channel ModeEnhancement
Fall Time13 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.001058 oz
BrandON Semiconductor / Fairchild
RoHS Details
SeriesFDN360P
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDN360P
Pd - Power Dissipation500 mW
Product CategoryMOSFET
Part # AliasesFDN360P_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
Vds - Drain-Source Breakdown Voltage30 V
DescriptionMOSFET SSOT-3 P-CH -30V
TradenamePowerTrench
Number of Channels1 Channel
Rise Time13 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)