参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Width1.3 mm
Transistor PolarityP-Channel
Id - Continuous Drain Current3.4 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height1.1 mm
Typical Turn-On Delay Time3.6 ns
MXHTS85412101
Length2.9 mm
CNHTS8541210000
Rds On - Drain-Source Resistance80 mOhms
KRHTS8541299000
Transistor Type1 P-Channel
Typical Turn-Off Delay Time36.3 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge12.2 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMP4065S-7
Factory Pack Quantity3000
SeriesDMP4065
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 40V P-Ch Enh Mode 20Vgs 587pF 12.2nC
Channel ModeEnhancement
Fall Time15.3 ns
USHTS8541290095
Unit Weight0.000282 oz
Pd - Power Dissipation1.4 W
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time2.9 ns
Moisture Sensitivity Level1 (Unlimited)