SBC856ALT1G

厂牌：安森美(onsemi)

包装：REEL 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000047178021

描述：Trans GP BJT PNP 65V 0.2A 300mW Automotive 3-Pin SOT-23 T/R

商品参数

参数项参数值

DC Current Gain hFE Max250

Gain Bandwidth Product fT100 MHz

ConfigurationSingle

Collector- Base Voltage VCBO- 80 V

Collector- Emitter Voltage VCEO Max- 65 V

Continuous Collector Current- 100 mA

TechnologySi

KRHTS8541219000

Transistor PolarityPNP

Emitter- Base Voltage VEBO- 5 V

JPHTS8541210101

Minimum Operating Temperature- 55 C

CAHTS8541210000

QualificationAEC-Q101

ImageON Semiconductor SBC856ALT1G

DescriptionBipolar Transistors - BJT SS GP XSTR PNP 65V

Collector-Emitter Saturation Voltage- 0.3 V

PackagingCut Tape

PackagingMouseReel

PackagingReel

Package / CaseSOT-23-3

Maximum Operating Temperature+ 150 C

Product CategoryBipolar Transistors - BJT

Factory Pack Quantity3000

Mounting StyleSMD/SMT

BrandON Semiconductor

Product TypeBJTs - Bipolar Transistors

RoHS Details

TARIC8541210000

MXHTS85412101

ManufacturerON Semiconductor

SeriesSBC856ALT1G

SubcategoryTransistors

USHTS8541210095

Unit Weight0.000282 oz

CNHTS8541210000

Pd - Power Dissipation225 mW

Moisture Sensitivity Level1 (Unlimited)