参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Id - Continuous Drain Current60 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 16 V, + 20 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance4.9 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time39 ns
MXHTS85412999
Qg - Gate Charge56 nC
CNHTS8541290000
Package / CasePowerPAK-SO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
Fall Time10 ns
TARIC8541290000
RoHS Details
SeriesSIR
BrandVishay / Siliconix
ImageVishay / Siliconix SIRA01DP-T1-GE3
Unit Weight0.005098 oz
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerVishay
Pd - Power Dissipation62.5 W
DescriptionMOSFET -30V Vds 16V Vgs PowerPAK SO-8
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
TradenameTrenchFET, PowerPAK
Number of Channels1 Channel
Rise Time6 ns
Moisture Sensitivity Level1 (Unlimited)