SI4459BDY-T1-GE3

厂牌：Vishay Siliconix

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000047179073

描述：MOSFET P-CH -30V -27.8A SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-27.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Power Dissipation Pd:5.6W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Forward Transconductance - Min81 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current27.8 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time15 ns

Rds On - Drain-Source Resistance4.6 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time39 ns

MXHTS85411001

Qg - Gate Charge56 nC

CNHTS8541290000

Package / CaseSO-8

Mounting StyleSMD/SMT

JPHTS8541100901

Maximum Operating Temperature+ 150 C

CAHTS8541100090

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

PackagingCut Tape

PackagingReel

PackagingMouseReel

Fall Time10 ns

TARIC8541290000

RoHS Details

BrandVishay Semiconductors

ImageVishay Semiconductors Si4459BDY-T1-GE3

Product TypeMOSFET

Factory Pack Quantity2500

Product CategoryMOSFET

SubcategoryMOSFETs

ManufacturerVishay

Pd - Power Dissipation5.6 W

DescriptionMOSFET -30V Vds 16V Vgs SO-8

USHTS8541100080

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time6 ns

Moisture Sensitivity Level1 (Unlimited)